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 LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only BAR DIGIT LED DISPLAY
Pb
Lead-Free Parts
LBD336C-XXB
DATA SHEET
DOC. NO REV. DATE
: :
QW0905- LBD336C-XXB A
: 05 - Dec. - 2008
LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only
PART NO. LBD336C-XXB Page 1/9
Package Dimensions
33.0(1.30")
11.0 (0.43")
11.0 (0.43")
7.62 (0.3")
Y
R
G
Y
R
LBD336C -XXB LIGITEK
6.4 (0.25") O0.45 TYP 2.54*6=15.24(0.6") 4.00.5
PIN NO. 1
Note : 1.All dimension are in millimeters and (lnch) tolerance is 0.25mm(0.01") unless otherwise noted. 2.Specifications are subject to change without notice.
.3.Film:temperature-resistant100C.
LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only
PART NO.LBD336C-XXB Page 2/9
Internal Circuit Diagram
LBD336C-XXB
8
a 1
b 14
c 2
d 4
A B C D E F G DP 9 10 3 5 12 13 11 7
LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only
PART NO.LBD336C-XXB Page 3/9
Electrical Connection
PIN NO. 1. 2. 3. 4. 5. 6. 7. 8. 9. 10. 11. 12. 13. 14.
LBD336C-XXB Cathode a Cathode c Cathode C Cathode d Cathode D NC Cathode DP Common Anode Cathode A Cathode B Cathode G Cathode E Cathode F Cathode b
LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only
PART NO. LBD336C -XXB Page 4/9
Absolute Maximum Ratings at Ta=25
Ratings Parameter Symbol Red Forward Current Per Chip Peak Forward Current Per Chip (Duty 1/10,0.1ms Pulse Width) Power Dissipation Per Chip Reverse Current Per Any Chip Operating Temperature Storage Temperature IF 15 70 Green 15 80 Yellow 15 50 mA UNIT
IFP
mA
PD Ir Topr Tstg
50
50 10 -25 ~ +85 -25 ~ +85
50
mW
A
Part Selection And Application Information(Ratings at 25)
Electrical
CHIP
PART NO
Material GaAlAs
LBD336C-XXB
common cathode or anode Emitted
Red Green Common Anode
P (nm)
660 565 585
(nm)
Min. 20 30 35 1.5 1.7 1.7
Vf(v) Typ. 2.1 2.1 2.1
Iv(mcd) Min. Typ
IV-M
1.75 3.05 --------2:1
GaP
GaAsP/GaP Yellow
Note : 1.The forward voltage data did not including 0.1V testing tolerance. 2. The luminous intensity data did not including 15% testing tolerance.
LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only
PART NO. LBD336C-XXB Page 5/9
Test Condition For Each Parameter
Parameter Forward Voltage Per Chip Luminous Intensity Per Chip Peak Wavelength Spectral Line Half-Width Reverse Current Any Chip Luminous Intensity Matching Ratio Symbol Vf Iv Unit volt mcd nm nm Test Condition If=10mA If=10mA If=20mA If=20mA Vr=5V
P
Ir IV-M
A
LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only
PART NO. LBD336C-XXB Page6/9
Typical Electro-Optical Characteristics Curve
SR CHIP
Fig.1 Forward current vs. Forward Voltage Fig.2 Relative Intensity vs. Forward Current
3.0
1000
Forward Current(mA)
100
Relative Intensity Normalize @20mA
2.5 2.0 1.5 1.0 0.5 0.0
10 1.0
0.1 1.0 2.0 3.0 4.0 5.0
1.0
10
100
1000
Forward Voltage(V) Fig.3 Forward Voltage vs. Temperature
Forward Current(mA) Fig.4 Relative Intensity vs. Temperature
3.0 2.5 2.0 1.5 1.0 0.5 0.0 -40 -20 0 20 40 60 80 100
Forward Voltage@20mA Normalize @25
1.1 1.0
0.9 0.8 -40 -20 0 20 40 60 80 100
Relative Intensity@20mA Normalize @25
1.2
Ambient Temperature()
Ambient Temperature()
Fig.5 Relative Intensity vs. Wavelength
Relative Intensity@20mA
1.0
0.5
0.0 600 650 700 750
Wavelength (nm)
LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only
PART NO. LBD336C-XXB Page 7/9
Typical Electro-Optical Characteristics Curve
G CHIP
Fig.1 Forward current vs. Forward Voltage Fig.2 Relative Intensity vs. Forward Current
Forward Current(mA)
Relative Intensity Normalize @20mA
Forward Voltage(V) Fig.3 Forward Voltage vs. Temperature
Forward Current(mA) Fig.4 Relative Intensity vs. Temperature
Forward Voltage@20mA Normalize @25
Relative Intensity@20mA Normalize @25
Ambient Temperature()
Ambient Temperature()
Fig.5 Relative Intensity vs. Wavelength
Relative Intensity@20mA
1.0
0.5
0.0 500 550 600 650
Wavelength (nm)
LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only
PART NO. LBD336C-XXB Page 8/9
Typical Electro-Optical Characteristics Curve
Y CHIP
Fig.1 Forward current vs. Forward Voltage Fig.2 Relative Intensity vs. Forward Current
Forward Current(mA)
Relative Intensity Normalize @20mA
Forward Voltage(V) Fig.3 Forward Voltage vs. Temperature
Forward Current(mA) Fig.4 Relative Intensity vs. Temperature
Forward Voltage@20mA Normalize @25
Relative Intensity@20mA Normalize @25
Ambient Temperature()
Ambient Temperature()
Fig.5 Relative Intensity vs. Wavelength
Relative Intensity@20mA
1.0
0.5
0.0 500 550 600 650 700
Wavelength (nm)
LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only
PART NO. LBD336C-XXB Page 9/9
Reliability Test:
Test Item
Test Condition
1.Under Room Temperature 2.If=10mA 3.t=1000 hrs (-24hrs, +72hrs)
Description
This test is conducted for the purpose of detemining the resistance of a part in electrical and themal stressed.
Reference Standard
MIL-STD-750: 1026 MIL-STD-883: 1005 JIS C 7021: B-1
Operating Life Test
High Temperature Storage Test
1.Ta=105 5 2.t=1000 hrs (-24hrs, +72hrs)
The purpose of this is the resistance of the device which is laid under condition of high temperature for hours.
MIL-STD-883:1008 JIS C 7021: B-10
Low Temperature Storage Test
1.Ta=-40 5 2.t=1000 hrs (-24hrs, +72hrs)
The purpose of this is the resistance of the device which is laid under condition of low temperature for hours.
JIS C 7021: B-12
High Temperature High Humidity Test
1.Ta=65 5 2.RH=90 %~95% 3.t=240hrs 2hrs
The purpose of this test is the resistance of the device under tropical for hours.
MIL-STD-202:103B JIS C 7021: B-11
Thermal Shock Test
1.Ta=105 5&-405 (10min) (10min) 2.total 10 cycles
The purpose of this is the resistance of the device to sudden extreme changes in high and low temperature. This test intended to determine the thermal characteristic resistance of the device to sudden exposures at extreme changes in temperature when soldering the lead wire.
MIL-STD-202: 107D MIL-STD-750: 1051 MIL-STD-883: 1011
Solder Resistance Test
1.T.Sol=260 5 2.Dwell time= 10 1sec.
MIL-STD-202: 210A MIL-STD-750: 2031 JIS C 7021: A-1
Solderability Test
1.T.Sol=230 5 2.Dwell time=5 1sec
This test intended to see soldering well performed or not.
MIL-STD-202: 208D MIL-STD-750: 2026 MIL-STD-883: 2003 JIS C 7021: A-2


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